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access icon free High-power single-chip GaN-based white LED with 3058 lm

A high-power phosphor-converted white LED with 3058 lm is reported. The high-power white LED was manufactured by utilising a single-blue LED chip with a cerium-doped yttrium aluminium garnet phosphor crystal film, and the LED chip consists of 16 LED cells that are connected in series, the chip dimensions are of 4.5 × 4.5 mm2. The electrical and optical characteristics of the LED were measured up to a 500 mA injection current under direct operation conditions. Results show that the luminous flux and luminous efficacy at 500 mA reach to 3058 lm and 128 lm/W, respectively.

References

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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2016.2789
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Erratum: High-power single-chip GaN-based white LED with 3058 lm
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