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1–2 GHz 2 mW injection-locked ring oscillator based phase shifter in 0.18 µm CMOS technology

1–2 GHz 2 mW injection-locked ring oscillator based phase shifter in 0.18 µm CMOS technology

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A new phase shifter based on injection-locked ring oscillator is proposed. By using a multi-stage phase generator with voltage-controlled injection locking technique, the proposed phase shifter is able to generate a flexible combination of coarse and fine-tuned phase delays over a wide range of operating frequencies while a small silicon area is maintained. Fabricated in a 0.18 µm RF CMOS process which only occupies 50 × 40 µm, a proposed three-stage phase shifter achieves flexible phase delays and a measured operating frequency up to 2 GHz with a maximum power consumption of 2 mW from a 1.8 V supply.

References

    1. 1)
      • 1. Itoh, Y., Murata, T.: ‘An L-band SiGe HBT differential variable phase shifter with a combination of analog and digital phase control’. IEEE Asia Pacific Microwave Conf., December 2009, pp. 15891592.
    2. 2)
      • 2. Tseng, W.J., Tsai, Z.M., Lin, C.S., Wang, H.: ‘Ku-band phase shifter based on injection locked voltage oscillator’. IEEE Conf. on Wireless Information Technology and Systems, 2010, pp. 14.
    3. 3)
      • 3. Xiao, Q.: ‘A compact L-band broadband 6-bit MMIC phase shifter with low phase error’. European Microwave Integrated Circuits Conf. (EuMIC), Manchester, October, 2011, pp. 410413.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2016.2501
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