access icon free Non-volatile magnetic decoder based on MTJs

Spin transfer torque based magnetic tunnel junction (STT-MTJ) is under intense investigation for the design of hybrid spintronics/CMOS circuits. A novel non-volatile magnetic decoder (MD) based on MTJs is presented. Its output data is stored into a pair of MTJs in non-volatile state. The proposed MD promises area efficiency by sharing the same sense amplifier for normal CMOS-based dynamic decoder mode and non-volatile data sensing mode. Moreover, the symmetric structure largely weakens the impact of sneak current and ensures reliable sensing. By using a compact STT-MTJ model and the STMicroelectronics CMOS 28 nm design kit for CMOS counterparts, transient and Monte Carlo simulations are performed to validate its functionality and evaluate its performance merits.

Inspec keywords: CMOS integrated circuits; Monte Carlo methods; magnetic tunnelling; transient analysis; decoding

Other keywords: nonvolatile magnetic decoder; CMOS-based dynamic decoder mode; transient simulation; compact STT-MTJ model; Monte Carlo simulation; area efficiency; sense amplifier; STMicroelectronics CMOS design kit; hybrid spintronic-CMOS circuit design; spin transfer torque magnetic tunnel junction; sneak current; nonvolatile data sensing mode; nonvolatile state; nonvolatile MD

Subjects: Codecs, coders and decoders; Monte Carlo methods; CMOS integrated circuits

References

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      • 4. Kang, W., Zhao, W.S., Wang, Z.H., et al: ‘An overview of spin-based integrated circuits’. IEEE Conf. ASP-DAC, Singapore, January 2014, pp. 676683.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2016.2450
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