References

• 1. 1)
     • 2. Rahim, M., Felder, F., Fill, M., Zogg, H.: ‘Optically pumped 5 μm IV-VI VECSEL with Al-heat spreader’, Opt. Lett., 2008, 33, (24), pp. 3010–3012 (doi: 10.1364/OL.33.003010).
  2. 2)
     • 7. Heinen, B., Wang, T.L., Sparenberg, M., Weber, A., Kunert, B., Hader, J., Koch, S.W., Moloney, J.V., Koch, M., Stolz, W.: ‘106 W continuous-wave output power from vertical-external-cavity surface-emitting laser’, Electron. Lett., 2012, 48, (9), pp. 516–U102 (doi: 10.1049/el.2012.0531).
  3. 3)
     • 10. Guina, M., Harkonen, A., Suomalinen, S., Paajaste, J., Koskinen, R., Pessa, M., Okhotnikov, O.: ‘GaSb-based compounds tailored for mid-IR disk lasers’, Proc. SPIE, 2009, 7193, p. 71931F (doi: 10.1117/12.816221).
  4. 4)
     • 9. Hopkins, J.M., Hempler, N., Rösener, B., Schulz, N., Rattunde, M., Manz, C., Köhler, K., Wagner, J., Burns, D.: ‘High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 μm’, Opt. Lett., 2008, 33, (2), pp. 201–203 (doi: 10.1364/OL.33.000201).
  5. 5)
     • 4. Scheller, M., Paul, J.R., Laurain, A., Young, A., Koch, S.W., Moloney, J.V.: ‘Terahertz generation by difference frequency conversion of two single-frequency VECSELs in an external resonance cavity’. Proc. of SPIE, San Francisco, California, USA, 1 February 2014, vol. 8966.
  6. 6)
     • 14. Liau, Z.L.: ‘Semiconductor wafer bonding via liquid capillarity’, Appl. Phys. Lett., 2000, 77, (5), pp. 651–653 (doi: 10.1063/1.127074).
  7. 7)
     • 13. Kuznetsov, M., Hakimi, F., Sprague, R., Mooradian, A.: ‘Design and characteristics of high-power (>0.5 W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams’, J. Sel. Top. Quantum Electron., 1999, 5, (3), pp. 561–573 (doi: 10.1109/2944.788419).
  8. 8)
     • 8. Holl, P., Rattunde, M., Adler, S., Kaspar, S., Bronner, W., Bächle, A., Aidam, R., Wagner, J.: ‘Recent advances in power scaling of GaSb-based semiconductor disk lasers’, J. Sel. Top. Quantum Electron., 2015, 21, (6), p. 1501012 (doi: 10.1109/JSTQE.2015.2414919).
  9. 9)
     • 15. Hader, J., Wang, T.L., Moloney, J.V., Heinen, B., Koch, M., Koch, S.W., Kunert, B., Stolz, W.: ‘On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers’, J. Appl. Phys., 2013, 113, (15), pp. 153102-10–1531024 (doi: 10.1063/1.4802586).
  10. 10)
      • 5. Keller, U.: ‘Ultrashort-pulse generation using VECSELs and MIXSELs’. Frontiers in Optics 2014, OSA Technical Digest (online) (Optical Society of America, 2014), paper LM3G.1, Laser Science 2014, Tucson, Arizona, USA, 19–23 October 2014.
  11. 11)
      • 6. Kornaszewski, L., Maker, G., Malcolm, G.P.A., Butkus, M., Rafailov, E.U.,, Hamilton, C.J.: ‘Sesam-free mode-locked semiconductor disk laser’, Laser Photonics Rev., 2012, 6, (6), pp. L20–L23 (doi: 10.1002/lpor.201200047).
  12. 12)
      • 12. Field, J.E.: ‘The properties of natural and synthetic diamond’ (Academic Press, London, 1992).
  13. 13)
      • 11. Ioffe Physico-Technical Institute: ‘New semiconductor materials. characteristics and properties’, 2001. Available at http://www.ioffe.ru/SVA/NSM/.
  14. 14)
      • 1. Calvez, S., Hastie, J.E., Guina, M., Okhotnikov, O.G., Dawson, M.D.: ‘Semiconductor disk lasers for the generation of visible and ultraviolet radiation’, Laser Photonics Rev., 2009, 3, (5), pp. 407–434 (doi: 10.1002/lpor.200810042).
  15. 15)
      • 3. Kahle, H., Bek, R., Heldmaier, M., Schwarzbäck, T., Jetter, M., Michler, P.: ‘High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL’, Appl. Phys. Express, 2014, 7, (9), pp. 092705-1–092705-4 (doi: 10.7567/APEX.7.092705).