access icon free Low Ron and high robustness ESD protection design for low-voltage power clamp application

An electrostatic discharge (ESD) protection circuit with novel structure based on a silicon-controlled rectifier (SCR) is proposed for 5 V ESD protection of integrated circuits. The proposed ESD protection circuit has large current driving capacity due to its low on-resistance and high ESD robustness in comparison with the conventional SCR-based ESD protection circuit. The conventional SCR-based ESD protection circuit and the proposed ESD protection circuit were fabricated using a 0.18 µm bipolar CMOS-double diffused metal-oxide semiconductor transistor (DMOS) process, and their electrical characteristics and ESD robustness were comparatively analysed using transmission line pulse measurements.

Inspec keywords: power integrated circuits; CMOS integrated circuits; transmission lines; bipolar integrated circuits; integrated circuit design; thyristors; electrostatic discharge; pulse measurement

Other keywords: voltage 5 V; transmission line pulse measurements; bipolar CMOS-DMOS process; integrated circuits ESD protection design; silicon controlled rectifier; electrostatic discharge protection circuit; SCR; low-voltage power clamp

Subjects: Semiconductor integrated circuit design, layout, modelling and testing; Thyristors and silicon controlled rectifiers; Power integrated circuits; Electrostatics; Mixed technology integrated circuits; Power electronics, supply and supervisory circuits

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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2016.2391
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content/journals/10.1049/el.2016.2391
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