access icon free Silicon photodetectors with triple p–n junctions in CMOS technology at 650- and 850-nm wavelengths

A triple p–n junction Si photodetector using 0.25-μm standard CMOS process at 650- and 850-nm wavelengths is presented and investigated. Triple p–n junctions are formed vertically by n+-implant/p-well (N+/HVPW), p-well/n+-buried layer (HVPW/NBL), and n+-buried layer/p-substrate (NBL/P-sub) junctions to attain a wavelength-dependent response. The responsivity and pulse response were characterised in different bias schemes. Measured photocurrents from HVPW/NBL and NBL/P-sub junctions under reverse biasing and a floating electrode on N+-HVPW showed the smallest FWHM values. The −3 dB bandwidth of 1.9 GHz converted from pulse measurement is the highest result ever reported in 654-nm wavelength using standard CMOS technology. The proposed triple p–n junction Si photodetector with bias schemes shows combined excellent performance in 650- and 850-nm wavelengths.

Inspec keywords: photodetectors; photodiodes; buried layers; CMOS integrated circuits; photoconductivity; pulse measurement; silicon; elemental semiconductors; p-n junctions

Other keywords: n+-buried layer-p-substrate junction; triple p-n junctions; NBL-P-sub junction; Si; silicon photodetectors; p-well-n+-buried layer junction; photocurrents; n+-implant-p-well junction; size 0.25 mum; pulse measurement; reverse biasing; wavelength 650 nm; floating electrode; pulse response; responsivity; wavelength-dependent response; HVPW-NBL junction; N+-HVPW junction; FWHM values; wavelength 850 nm; standard CMOS process

Subjects: Semiconductor doping; Photodetectors; Photoelectric devices; CMOS integrated circuits; Doping and implantation of impurities; Detection of radiation (bolometers, photoelectric cells, i.r. and submillimetre waves detection); Semiconductor junctions

References

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      • 7. Iiyama1, K., Takamatsu, H., Maruyama, T.: ‘Silicon lateral avalanche photodiodes fabricated by standard 0.18 μm CMOS Process’. European Conf. on Optical Communication, 2009, pp. 12.
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2016.2260
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