© The Institution of Engineering and Technology
The gradual erasing operation from reset state to set state adjusting pulse amplitude, duration time and falling time respectively in phase change device using Ge1Cu2Te3 is investigated. For this procedure, a relatively high voltage and increased falling time, which was able to produce both long-term potential and long-term depression in the time interval between pre-spike and post-spike is choosing. The results suggested that the presence of synaptic behaviour was due to controlled falling time rather than pulse amplitude.
References
-
-
1)
-
7. Bez, R.: ‘Chalcogenide PCM: a memory technology for next decade’. 2009 IEEE Int. Electron Devices Meeting (IEDM), Baltimore, MD, USA, 7–9 December 2009, pp. 1–4, .
-
2)
-
10. Shindo, S., Sutou, Y., Koike, J., Saito, Y., Song, Y.H.: ‘Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory’, Mater. Sci. Semicond. Process., 2016, 47, pp. 1–6 (doi: 10.1016/j.mssp.2016.02.006).
-
3)
-
1. Kuzum, D., Jeyasingh Rakesh, G.D., Lee, B.G., Philip Wong, H.-S.: ‘Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing’, Nano Lett., 2012, 12, (5), pp. 2179–2186 (doi: 10.1021/nl201040y).
-
4)
-
4. Lai, S.: ‘Non-volatile memory technologies: the quest for ever lower cost’. 2008 IEEE Int. Electron Devices Meeting, San Francisco, CA, 15–17 December 2008, pp. 1–6, .
-
5)
-
8. Sutou, Y., Kamada, T., Sumiya, M., Saito, Y., Koike, J.: ‘Crystallization process and thermal stability of Ge1Cu2Te3 amorphous thin films for use as phase change materials’, Acta Mater., 2012, 60, (3), pp. 872–880 (doi: 10.1016/j.actamat.2011.10.048).
-
6)
-
6. Ielmini, D.: ‘Analysis of phase distribution in phase-change nonvolatile memories’, Electron Device Lett., 2004, 25, pp. 507–509 (doi: 10.1109/LED.2004.831219).
-
7)
-
9. Kamada, T., Sutou, Y., Sumiya, M., Saito, Y.: ‘Crystallization and electrical characteristics of Ge1Cu2Te3 films for phase change random access memory’, Solid Films, 2012, 520, (13), pp. 4389–4393 (doi: 10.1016/j.tsf.2012.02.025).
-
8)
-
3. Kang, D.H., Jun, H.G., Ryoo, K.C., Jeong, H.S., Sohn, H.C.: ‘Emulation of spike-timing dependent plasticity in nano-scale phase change memory’, Neurocomputing, 2015, 155, pp. 153–158 (doi: 10.1016/j.neucom.2014.12.036).
-
9)
-
5. Chao, D.S., Hsu, H.H., Chen, M.J., et al: ‘Low programming current phase change memory cell with double GST thermally confined structure’. 2007 Int. Symp. on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 23–25 April 2007, pp. 1–2, .
-
10)
-
2. Suri, M., Soursa, V., Perniola, L., Vuillaume, D., DeSalv, B.: ‘Phase change memory for synaptic plasticity application in neuromorphic systems’. The 2011 Int. Joint Conf. on Neural Networks (IJCNN), San Jose, CA, 5 August 2011, pp. 619–624, .
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