access icon free Investigation of an erasing method for synaptic behaviour in a phase change device using Ge1Cu2Te3 (GCT)

The gradual erasing operation from reset state to set state adjusting pulse amplitude, duration time and falling time respectively in phase change device using Ge1Cu2Te3 is investigated. For this procedure, a relatively high voltage and increased falling time, which was able to produce both long-term potential and long-term depression in the time interval between pre-spike and post-spike is choosing. The results suggested that the presence of synaptic behaviour was due to controlled falling time rather than pulse amplitude.

Inspec keywords: copper compounds; germanium compounds; phase change memories

Other keywords: time interval; falling time; long-term depression; postspike; long-term potential; prespike; set state; reset state; GeCu2Te3; phase change device; synaptic behaviour; duration time; erasing method; pulse amplitude; GCT

Subjects: Memory circuits; Semiconductor storage

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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2016.2211
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