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Investigation of an erasing method for synaptic behaviour in a phase change device using Ge1Cu2Te3 (GCT)

Investigation of an erasing method for synaptic behaviour in a phase change device using Ge1Cu2Te3 (GCT)

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The gradual erasing operation from reset state to set state adjusting pulse amplitude, duration time and falling time respectively in phase change device using Ge1Cu2Te3 is investigated. For this procedure, a relatively high voltage and increased falling time, which was able to produce both long-term potential and long-term depression in the time interval between pre-spike and post-spike is choosing. The results suggested that the presence of synaptic behaviour was due to controlled falling time rather than pulse amplitude.

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