Harmonic multiplication based on Ge–Sb–Te resistive-switching devices

T. Kanehira; Y. Imanishi; H. Hayashi; T. Nakaoka

Harmonic multiplication based on Ge–Sb–Te resistive-switching devices

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Author(s): T. Kanehira ¹ ; Y. Imanishi ¹ ; H. Hayashi ¹ ; T. Nakaoka ¹
- Affiliations: 1: Faculty of Science and Technology, Sophia University, Tokyo 102-8554, Japan
Source: Volume 52, Issue 21, 13 October 2016, p. 1811 – 1813
DOI: 10.1049/el.2016.2016 , Print ISSN 0013-5194, Online ISSN 1350-911X

Received 02/06/2016, Published 20/09/2016

Harmonic resistive multipliers that exploit the unique current–voltage (I–V) characteristics of Ag/Ge–(Sb)–Te/Pt resistive-switching devices are demonstrated. For a Ge₁₇Sb₂₉Te₅₄-based device, an antisymmetric non-linear I–V curve with a hump-like structure at ±0.4 V is obtained, whereas for a Ge₅₁Te₄₉-based device, an asymmetric non-linear I–V curve with SET switching at +0.4 V and RESET switching at –0.1 V is observed. The Ge₁₇Sb₂₉Te₅₄-based device performs third harmonic multiplication for a 160 MHz input at 0 dBm, and sixth harmonic multiplication at 5 dBm under unbiased conditions without any matching circuit. For the latter device, biasing at a voltage of ±0.4 V leads to fifth harmonic multiplication, which is absent for a 0 dBm input under unbiased conditions. No harmonic multiplication is observed for an unbiased Ge₅₁Te₄₉-based device due to its high resistance, but biasing at the switching voltage of 0.4 V leads to fourth harmonic multiplication for a 0 dBm input. The unique non-linear characteristics of these devices suggest their potential for radio frequency applications.

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Harmonic multiplication based on Ge–Sb–Te resistive-switching devices

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