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Harmonic multiplication based on Ge–Sb–Te resistive-switching devices

Harmonic multiplication based on Ge–Sb–Te resistive-switching devices

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Harmonic resistive multipliers that exploit the unique currentvoltage (I–V) characteristics of Ag/Ge–(Sb)–Te/Pt resistive-switching devices are demonstrated. For a Ge17Sb29Te54-based device, an antisymmetric non-linear I–V curve with a hump-like structure at ±0.4 V is obtained, whereas for a Ge51Te49-based device, an asymmetric non-linear I–V curve with SET switching at +0.4 V and RESET switching at –0.1 V is observed. The Ge17Sb29Te54-based device performs third harmonic multiplication for a 160 MHz input at 0 dBm, and sixth harmonic multiplication at 5 dBm under unbiased conditions without any matching circuit. For the latter device, biasing at a voltage of ±0.4 V leads to fifth harmonic multiplication, which is absent for a 0 dBm input under unbiased conditions. No harmonic multiplication is observed for an unbiased Ge51Te49-based device due to its high resistance, but biasing at the switching voltage of 0.4 V leads to fourth harmonic multiplication for a 0 dBm input. The unique non-linear characteristics of these devices suggest their potential for radio frequency applications.

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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2016.2016
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