Fabrication of doped Pb(Zr,Ti)O3 capacitors on Pt substrates with different orientations

R. Tamano; T. Amano; Y. Takada; N. Okamoto; T. Saito; T. Yoshimura; N. Fujimura; K. Higuchi; A. Kitajima

Fabrication of doped Pb(Zr,Ti)O₃ capacitors on Pt substrates with different orientations

View Fulltext

Author(s): R. Tamano ¹ ; T. Amano ¹ ; Y. Takada ¹ ; N. Okamoto ¹ ; T. Saito ¹ ; T. Yoshimura ² ; N. Fujimura ² ; K. Higuchi ³ ; A. Kitajima ³
- Affiliations: 1: Department of Chemical Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531, Japan ;
  2: Department of Physics and Electronics, Osaka Prefecture University, Sakai, Osaka 599-8531, Japan ;
  3: Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
Source: Volume 52, Issue 16, 04 August 2016, p. 1399 – 1401
DOI: 10.1049/el.2016.1949 , Print ISSN 0013-5194, Online ISSN 1350-911X

Received 01/06/2016, Published 05/07/2016

The effects of crystallographic orientation on the ferroelectric properties of Pb(Zr,Ti)O₃ (PZT) thin films grown on (111) and (100)-oriented Pt substrates are investigated. The effects of doping PZT with species X (forming PXZT) thin films (Pb:X:Zr:Ti, 113:3:30:70; X = La, Nb, or Y) using chemical solution deposition were studied. The crystallinity of all PXZT films was almost identical. The remnant polarisation of the un-doped, La-, Nb-, and Y-doped PZT capacitors with Pt(111) bottom electrodes were 133.4, 64.7, 60.2, and 98.4 µC/cm², respectively. In ferroelectric capacitors with Pt(100) bottom electrodes, the remnant polarisations were 185.6, 148.1, 103.1, and 135.7 µC/cm², respectively. The remnant polarisation was larger with Pt(100) than with Pt(111). The initial remnant polarisation of the un-doped PZT capacitors was larger than that of PXZT.

References

1. 1)
  - 9. Takada, Y., Tsuji, T., Okamoto, N., Saito, T., Kondo, K., Yoshimura, T., Fujimura, N., Higuchi, K., Kitajima, A., Iwai, H.: ‘Effect of Al-doped ZnO or Sn-doped In2O3 electrode on ferroelectric properties of (Pb,La)(Zr,Ti)O3 capacitors’, Jpn. J. Appl. Phys., 2015, 54, (5S), p. 05ED03, (doi: 10.7567/JJAP.54.05ED03).
2. 2)
  - 12. Law, C.W., Tong, K.Y., Li, J.H., Li, K.: ‘Effect of pyrolysis temperature on the characteristics of PZT films deposited by the sol–gel method’, Thin Solid Films, 1998, 335, (1–2), pp. 220–224 (doi: 10.1016/S0040-6090(98)00813-X).
3. 3)
  - 3. Son, Y., Kim, K., Kim, C.: ‘Ferroelectric properties of lanthanide-doped Pb(Zr0.6, Ti0.4)O3 thin films prepared by using a sol–gel method’, Am. Vac. Soc., 2004, 22, (1743), pp. 1743–1745 (doi: 10.1116/1.1752893).
4. 4)
  - 2. James, F.S., Carlos, A.P.A.: ‘Ferroelectric memories’, Science, 1989, 246, (4936), pp. 1400–1405 (doi: 10.1126/science.246.4936.1400).
5. 5)
  - 5. Majumder, S.B., Roy, B., Katiyar, R.S., Krupanidhi, S.B.: ‘Effect of neodymium (Nd) doping on the dielectric and ferroelectric characteristics of sol–gel derived lead zirconate titanate (53/47) thin films’, J. Appl. Phys., 2001, 90, (6), pp. 2975–2984 (doi: 10.1063/1.1391416).
6. 6)
  - 1. Takasu, H.: ‘Ferroelectric memories and their applications’, Microelectron. Eng., 2001, 59, (1–4), pp. 237–246 (doi: 10.1016/S0167-9317(01)00630-X).
7. 7)
  - 16. Fujii, T., Hishinuma, Y., Mita, T., Arakawa, T.: ‘Preparation of Nb doped PZT film by RF sputtering’, Solid State Commun., 2009, 149, (41–42), pp. 1799–1802 (doi: 10.1016/j.ssc.2009.07.021).
8. 8)
  - 15. Takada, Y., Tsuji, T., Okamoto, N., Saito, T., Kondo, K., Yoshimura, T., Fujimura, N., Higuchi, K., Kitajima, A., Oshima, A.: ‘Effect of excess Pb on ferroelectric characteristics of conductive Al-doped ZnO and Sn-doped In2O3 top electrodes in PbLaZrTiOx capacitor’, Int. J. Mater. Res., 2015, 106, (1), pp. 83–87, (doi: 10.3139/146.111154).
9. 9)
  - 17. Gruveman, A., Rodriguez, B.J., Kingon, A.I., Nemanich, R.J., Tagantsev, A.K., Cross, J.S., Tsukada, M.: ‘Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors’, Appl. Phys. Lett., 2003, 83, (4), p. 728–730 (doi: 10.1063/1.1593830).
10. 10)
  - 18. Yamazoe, S., Sakurai, H., Fukada, M., Adachi, H., Wada, T.: ‘The effect of SrTiO3 substrate orientation on the surface morphology and ferroelectric properties of pulsed laser deposited NaNbO3 films‘, Appl. Phys. Lett., 2009, 95, (6), 062906 (doi: 10.1063/1.3205103).
11. 11)
  - 6. Boyle, T.J., Clem, P.G., Tuttle, B.A., Brennecka, G.L., Dawley, J.T., Rodriguez, M.A., Dunbar, T.D., Hammetter, W.F.: ‘Lanthanide series doping effects in lead zirconate titanate (PLnZT) thin films’, J. Mater. Res., 2002, 17, (4), pp. 871–878 (doi: 10.1557/JMR.2002.0126).
12. 12)
  - 13. Wang, Z., Maeda, R., Kikuchi, K.: ‘Effect of Pb content on electric properties of sol-gel derived lead zirconate titanate thin films prepared by three-step heat-treatment process’, Jpn. J. Appl. Phys., 1999, 38, (9B), pp. 5342–5345 (doi: 10.1143/JJAP.38.5342).
13. 13)
  - 4. Warren, W.L., Dimos, D., Pike, G.E., Tuttle, B.A., Raymond, M.V., Ramesh, R., Evans, J.T.Jr.: ‘Voltage shifts and imprint in ferroelectric capacitors’, Appl. Phys. Lett., 1995, 67, (6–7), pp. 866–868 (doi: 10.1063/1.115531).
14. 14)
  - 10. Takada, Y., Tsuji, T., Okamoto, N., Saito, T., Kondo, K., Yoshimura, T., Fujimura, N., Higuchi, K., Kitajima, A., Oshima, A.: ‘Aluminum-doped zinc oxide electrode for robust (Pb,La)(Zr,Ti)O3 capacitors: effect of oxide insulator encapsulation and oxide buffer layer’, J. Mater. Sci., Mater. Electron., 2014, 25, (5), pp. 2155–2161 (doi: 10.1007/s10854-014-1853-y).
15. 15)
  - 8. Chen, F., Tan, X., Huang, Z., Xuan, X., Wenbin, W.: ‘Effect of electrode configurations on the process-induced imprint behavior of epitaxial Pb(Zr0.52,Ti0.48)O3 capacitors’, Appl. Phys. Lett., 2010, 96, (26), 262902 (doi: 10.1063/1.3458599).
16. 16)
  - 7. Haertling, G.H.: ‘Ferroelectric ceramics: history and technology’, J. Am. Ceram. Soc., 1999, 82, (4), pp. 797–818 (doi: 10.1111/j.1151-2916.1999.tb01840.x).
17. 17)
  - 14. Bhaskar, A., Chang, T.H., Chang, H.Y., Cheng, S.Y.: ‘Pb(Zr0.53Ti0.47)O3 thin films with different thicknesses obtained at low temperature by microwave irradiation’, Appl. Surf. Sci., 2009, 255, (6), pp. 3795–3800 (doi: 10.1016/j.apsusc.2008.10.043).
18. 18)
  - 15. Sun, H., Zhang, Y., Liu, X., Guo, S., Liu, Y., Chen, W.: ‘The effect of Mn/Nb doping on dielectric and ferroelectric properties of PZT thin films prepared by sol–gel process’, J. Sol–Gel Sci. Technol., 2015, 74, (2), pp. 378–386 (doi: 10.1007/s10971-014-3608-x).

Login

Not registered yet?

Share

Tools

Login to add to favourites

Key

Fabrication of doped Pb(Zr,Ti)O₃ capacitors on Pt substrates with different orientations

References

Related content