Fabrication of doped Pb(Zr,Ti)O3 capacitors on Pt substrates with different orientations

Fabrication of doped Pb(Zr,Ti)O3 capacitors on Pt substrates with different orientations

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The effects of crystallographic orientation on the ferroelectric properties of Pb(Zr,Ti)O3 (PZT) thin films grown on (111) and (100)-oriented Pt substrates are investigated. The effects of doping PZT with species X (forming PXZT) thin films (Pb:X:Zr:Ti, 113:3:30:70; X = La, Nb, or Y) using chemical solution deposition were studied. The crystallinity of all PXZT films was almost identical. The remnant polarisation of the un-doped, La-, Nb-, and Y-doped PZT capacitors with Pt(111) bottom electrodes were 133.4, 64.7, 60.2, and 98.4 µC/cm2, respectively. In ferroelectric capacitors with Pt(100) bottom electrodes, the remnant polarisations were 185.6, 148.1, 103.1, and 135.7 µC/cm2, respectively. The remnant polarisation was larger with Pt(100) than with Pt(111). The initial remnant polarisation of the un-doped PZT capacitors was larger than that of PXZT.


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