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Data retention characteristics are investigated in charge trapping flash memory. The physical root cause of the non-Arrhenius behaviour, which is the general retention characteristic in charge trap flash memories, is numerical modelling that the charge loss mechanism is associated with the trap energy level in the charge storage area. For expression of the charge loss in the relatively shallow traps, multiphonon emission model is adopted. Finally, the ratio of the relatively shallow traps to middle and deep level traps is extracted in a sample data.
References
-
-
1)
-
12. Gu, S.-H., Hsu, C.-W., Wang, T., et al: ‘Numerical simulation of bottom oxide thickness effect on charge retention in SONOS flash memory cells’, IEEE Trans. Electron Devices, 2007, 54, (2), pp. 90–97 (doi: 10.1109/TED.2006.887219).
-
2)
-
6. Lue, H.T., Wang, S.Y., Hsiao, Y.H., et al: ‘Reliability model of bandgap engineered sonos (be-sonos)’. Tech. Dig. Inter. Electron Dev. Meeting, San Francisco, USA, December 2006, pp. 1–4.
-
3)
-
4. Nozawa, H., Kohyama, S.: ‘A thermionic electron emission model for charge retention in sanos structures’, Jpn J. Appl. Phys., 1982, 21, (1), pp. 111–112 (doi: 10.1143/JJAP.21.L111).
-
4)
-
11. Henry, C.H., Lang, D.V.: ‘Nonradiative capture and recombination by multiphonon emission in GaAs and GaP’, Phys. Rev. B, 1977, 15, (2), pp. 989–1016 (doi: 10.1103/PhysRevB.15.989).
-
5)
-
8. Lee, K., Kang, M., Seo, S., et al: ‘Activation energies (Ea) of failure mechanisms in advanced NAND flash cells for different generations and cycling’, IEEE Trans. Electron Devices, 2013, 60, (3), pp. 1099–1107 (doi: 10.1109/TED.2013.2241065).
-
6)
-
2. Park, S., Choi, S., Jun, K.S., et al: ‘Self-consistent simulation on multiple activation energy of retention characteristics in charge trapping flash memory’, Solid-State Electron., 2015, 113, (11), pp. 144–150 (doi: 10.1016/j.sse.2015.05.026).
-
7)
-
7. Compagnoni, C., Spinelli, A.S., Lacaita, A.L.: ‘Experimental study of data retention in nitride memories by temperature and field acceleration’, IEEE Electron Device Lett., 2007, 28, (7), pp. 628–630 (doi: 10.1109/LED.2007.898487).
-
8)
-
10. Amato, M.A., Ridley, B.K.: ‘A comparison of simple theoretical models for the photoionisation of impurities in semiconductors’, J. Phys. C, Solid State Phys., 1980, 13, (10), pp. 2027–2039 (doi: 10.1088/0022-3719/13/10/023).
-
9)
-
9. Govoreanu, B., Houdt, J.V.: ‘On the roll-off of the activation energy plot in high-temperature flash memory retention tests and its impact on the reliability assessment’, IEEE Electron Device Lett., 2008, 29, (2), pp. 177–179 (doi: 10.1109/LED.2007.914089).
-
10)
-
5. Kim, J., Kang, C., Chang, S.I., et al: ‘New phenomena for the lifetime prediction of tanos based charge trap nand flash memory’. Device research conference (DRC), IN, USA, June 2010, pp. 99–100.
-
11)
-
1. Lee, W.-S.: ‘Future memory technologies’. International conference on solid-state and integrated-circuit technology (ICSICT), Beijing, China, October 2008, pp. 1–4.
-
12)
-
3. Tanaka, H., Kido, M., Yahashi, K., et al: ‘A. Bit cost scalable technology with punch and plug process for ultra high density flash memory’. VLSI Symp. Tech. Dig., Kyoto, Japan, June 2007, pp. 14–15.
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