Data retention characteristics are investigated in charge trapping flash memory. The physical root cause of the non-Arrhenius behaviour, which is the general retention characteristic in charge trap flash memories, is numerical modelling that the charge loss mechanism is associated with the trap energy level in the charge storage area. For expression of the charge loss in the relatively shallow traps, multiphonon emission model is adopted. Finally, the ratio of the relatively shallow traps to middle and deep level traps is extracted in a sample data.

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Modelling by using multiphonon emission theory of data retention characteristics in charge trapping flash memory

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