access icon free Improving breakdown performance for novel LDMOS using n+ floating islands in substrate

© The Institution of Engineering and Technology
Received 08/12/2015, Published 11/03/2016

A novel lateral double-diffusion MOS (LDMOS) with n+ floating islands in the substrate (NFI LDMOS) is proposed. In the NFI LDMOS, a series of n+ floating islands are introduced into the substrate. On the condition of a high-voltage blocking state, n+ floating islands induce the high potential from the drain region to the source region, which modulates the drift region's electric field and leads to a higher breakdown voltage (BV). What is more, the specific on-resistance (R on,sp) is reduced by the higher doping concentration of the drift region due to the n+ floating islands. Compared with the conventional LDMOS at the same 40 μm drift region, the BV of the NFI LDMOS is enhanced by 74.6% and R on,sp is reduced by 19.7%. So, the proposed NFI LDMOS possesses a higher figure-of-merit (FOM).

Inspec keywords: MIS devices; electric breakdown; semiconductor doping

Other keywords: source region; electric field modulation; BV; doping concentration; NFI LDMOS; size 40 mum; lateral double-diffusion MOS; n+ floating island; breakdown voltage; FOM; high-voltage blocking state; drain region; figure-of-merit

Subjects: Semiconductor doping; Dielectric breakdown and discharges; Semiconductor devices

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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2015.4140
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