access icon free Dead-time optimisation for a phase-shifted dc–dc full bridge converter with GaN HEMT

An accurate dead-time adjustment method for phase-shifted full bridge (PSFB) converter is presented. This method allows the dead-time of converters to be optimised to meet zero voltage switching condition. The optimum dead-time range can be predicted with high accuracy for any type of power semiconductor switch, including gallium nitride high-electron-mobility transistor, so that a practical design for a PSFB converter can be realised. The validity of the proposed dead-time optimisation method was verified by experimental results with a 600 W prototype.

Inspec keywords: III-V semiconductors; gallium compounds; DC-DC power convertors; wide band gap semiconductors; power semiconductor switches; zero voltage switching; optimisation; high electron mobility transistors

Other keywords: phase-shifted dc–dc full bridge converter; dead-time optimisation; GaN; power semiconductor switch; HEMT; gallium nitride high-electron-mobility transistor; zero voltage switching condition

Subjects: Relays and switches; Other field effect devices; Power semiconductor devices; Power electronics, supply and supervisory circuits

http://iet.metastore.ingenta.com/content/journals/10.1049/el.2015.3650
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content/journals/10.1049/el.2015.3650
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