© The Institution of Engineering and Technology
A C-band GaN high power amplifier (HPA) microwave monolithic integrated circuit (MMIC) with second harmonic tuned circuits is presented. The MMIC is designed with three stages to ensure high gain, and the final stage is matched with optimised second harmonic impedance to improve the power added efficiency (PAE). Experimental results show that the class AB GaN HPA MMIC, with drain voltage of 28 V, can be realised with more than 40% PAE and 60 W output power, with associated gain of 25 dB, in 5–6 GHz at 100 μs pulse width and 10% duty cycle. The chip area is 3.2 × 5.3 mm (16.96 mm).
References
-
-
1)
-
11. Jeong, J-C., Jang, D-P., Han, B-G.: ‘Yom I-B.A compact C-band 50-W AlGaN/GaN high-power MMIC amplifier for radar applications’, J. Electron. Telecommun. Res. Inst., 2014, 36, (3), pp. 498–501, .
-
2)
-
4. Gao, Z., Liu, C., Guo, G., et al: ‘Design of broadband class E power amplifier in continuous operation modes’, Electron. Lett., 2013, 49, (25), pp. 1643–1645, (doi: 10.1049/el.2013.3119).
-
3)
-
1. Pengelly, R.S., Wood, S.M., Milligan, J.W., et al: ‘A review of GaN on SiC high electron-mobility power transistors and MMICs’, IEEE Trans. Microw. Theory Tech., 2012, 60, (6), pp. 1764–1783, (doi: 10.1109/TMTT.2012.2187535).
-
4)
-
2. Komiak, J.J.: ‘GaN HEMT: dominant force in high-frequency solid-state power amplifiers’, IEEE Microw. Mag., 2015, 16, (3), pp. 97–105, (doi: 10.1109/MMM.2014.2385303).
-
5)
-
6. Colantonio, P., Giannini, F., Limiti, E.: ‘High efficiency RF and microwave solid state power amplifiers’ (John Wiley & Sons, New York, 2009).
-
6)
-
3. Florian, C., Cignani, R., Santarelli, A., et al: ‘Design of 40-W AlGaN/GaN MMIC high power amplifiers for C-band SAR applications’, IEEE Trans. Microw. Theory Tech., 2013, 61, (12), pp. 4492–4504, (doi: 10.1109/TMTT.2013.2286109).
-
7)
-
5. Sun, Y., Zhu, X.: ‘Broadband continuous class F-1 amplifier with modified harmonic-controlled network for advanced long term evolution application’, IEEE Microw. Wirel. Compon. Lett., 2015, 25, (4), pp. 250–252, (doi: 10.1109/LMWC.2015.2400941).
-
8)
-
7. Alexander, A., Leckey, J.A.: ‘120 watt GaN power amplifier MMIC utilizing harmonic tuning circuits for S-band applications’. IEEE 2015 Int. Microwave Symp. (IMS), Phoenix, 17–22 May 2015, pp. 1–3, .
-
9)
-
8. Wang, C., Xu, Y., Yu, X., et al: ‘An electrothermal model for empirical large signal modeling of AlGaN/GaN HEMTs including self-heating and ambient temperature effects’, IEEE Trans. Microw. Theory Tech., 2014, 62, (12), pp. 2878–2888, (doi: 10.1109/TMTT.2014.2364821).
-
10)
-
9. Florian, C., Cignani, R., Niessen, D., Santarelli, A.: ‘A C-band AlGaN–GaN MMIC HPA for SAR’, IEEE Microw. Wirel. Compon. Lett., 2012, 22, (9), pp. 471–473, (doi: 10.1109/LMWC.2012.2212238).
-
11)
-
12. Noh, Y-S., Yom, I-B.: ‘Highly integrated C-band GaN high power amplifier MMIC for phased array applications’, IEEE Microw. Wirel. Compon. Lett., 2015, 25, (6), pp. 406–408, (doi: 10.1109/LMWC.2015.2421316).
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2015.3017
Related content
content/journals/10.1049/el.2015.3017
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Correspondence
This article has following corresponding article(s):
in brief