access icon free Small area 0.3 pJ/conv, 45 ps time-to-digital converter for arrays of silicon photomultiplier interfaces in 150 nm CMOS

A ring-oscillator-based time-to-digital converter (TDC) is presented which can achieve a figure-of-merit of 0.3 pJ/conv in a very small footprint of 0.0024 mm2. Thanks to the optimisation of the ring-oscillator and of the sub-cycle interpolation, a 45-ps LSB is obtained with only 0.95 mW of power consumption. The area and power characteristics make the TDC suitable for its use in repeated instances, such as in multiple silicon photomultipliers readout channels or single-photon imaging devices with time-correlated detection.

Inspec keywords: photomultipliers; CMOS image sensors; readout electronics; photodetectors; time-digital conversion

Other keywords: single photon imaging device; CMOS integrated circuit; small area time-digital converter; photomultipliers readout channel; ring oscillator; time correlated detection; size 150 nm; power 0.95 mW; silicon photomultiplier interface arrays

Subjects: Signal processing and conditioning equipment and techniques; CMOS integrated circuits; Image sensors; A/D and D/A convertors; Photodetectors

References

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      • 6. Mandai, S., Jain, J., Charbon, E.: ‘A fully-integrated 780 × 800 μm2 multi-digital silicon photomultiplier with column-parallel time-to-digital converter’. Proc. of the ESSCIRC, Bordeaux, France, September 2012, pp. 8992, doi: 10.1109/ESSCIRC.2012.6341263.
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