access icon free Reliable majority voter based on spin transfer torque magnetic tunnel junction device

A reliable majority voter circuit using a nanometre spin transfer torque magnetic tunnel junction (STT-MTJ) is presented. The circuit tolerates single transient faults and manages process variations due to technology downscaling. The use of this magnetic device brings non-volatility memory to logic circuits and promises to overcome the rising standby power issue. By using the STMicroelectronics fully depleted silicon on insulator 28 nm design kit and a precise STT-MTJ compact model, electrical simulations have been carried out to show its low-power and high reliability performances.

Inspec keywords: logic circuits; torque; MRAM devices; integrated circuit reliability; silicon-on-insulator; magnetic tunnelling; transient analysis

Other keywords: logic circuit; STMicroelectronics; fully depleted silicon on insulator; nonvolatility memory; STT-MTJ; transient fault; spin transfer torque magnetic tunnel junction; magnetic device; technology downscaling; majority voter circuit reliability; size 28 nm; process variation

Subjects: Storage on stationary magnetic media; Mathematical analysis; Reliability; Logic circuits; Logic and switching circuits; Magneto-acoustic, magnetoresistive, magnetostrictive and magnetostatic wave devices

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      • 4. Ban, T., Naviner, L.A.B.: ‘A simple fault-tolerant digital voter circuit in TMR nanoarchitectures’. IEEE Int. NEWCAS Conf., Montreal, Canada, June 2010, pp. 269272, doi: 10.1109/NEWCAS.2010.5603933.
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2015.2738
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