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Reliable majority voter based on spin transfer torque magnetic tunnel junction device

Reliable majority voter based on spin transfer torque magnetic tunnel junction device

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A reliable majority voter circuit using a nanometre spin transfer torque magnetic tunnel junction (STT-MTJ) is presented. The circuit tolerates single transient faults and manages process variations due to technology downscaling. The use of this magnetic device brings non-volatility memory to logic circuits and promises to overcome the rising standby power issue. By using the STMicroelectronics fully depleted silicon on insulator 28 nm design kit and a precise STT-MTJ compact model, electrical simulations have been carried out to show its low-power and high reliability performances.

References

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      • 4. Ban, T., Naviner, L.A.B.: ‘A simple fault-tolerant digital voter circuit in TMR nanoarchitectures’. IEEE Int. NEWCAS Conf., Montreal, Canada, June 2010, pp. 269272, doi: 10.1109/NEWCAS.2010.5603933.
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