Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

H.H. Alhashim; M.Z.M. Khan; M.A. Majid; T.K. Ng; B.S. Ooi

Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

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Author(s): H.H. Alhashim ¹ ; M.Z.M. Khan ¹ ; M.A. Majid ¹ ; T.K. Ng ¹ ; B.S. Ooi ¹
- Affiliations: 1: Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Source: Volume 51, Issue 18, 03 September 2015, p. 1444 – 1445
DOI: 10.1049/el.2015.1803 , Print ISSN 0013-5194, Online ISSN 1350-911X

This is an open access article published by the IET under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/)

Received 24/05/2015, Published 15/08/2015

Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm⁻¹), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.

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Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

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