Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

access icon openaccess Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm−1), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.

References

    1. 1)
    2. 2)
    3. 3)
    4. 4)
    5. 5)
    6. 6)
    7. 7)
    8. 8)
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2015.1803
Loading

Related content

content/journals/10.1049/el.2015.1803
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address