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Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

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High performance Si-based Ge0.9Sn0.1 photoconductive infrared detectors have been demonstrated. The device fabrication is fully compatible with the complementary metal-oxide-semiconductor (CMOS) process. The room temperature responsivity at 1.55 μm is 0.26 A/W and comparable with that of commercially available InGaAs and Ge photovoltaic detectors. Temperature-dependent study shows an increased peak responsivity of 2.85 A/W at 77 K. The spectral response has a longwave cutoff of 2.4 and 2.2 μm at 300 and 77 K, respectively. Specific detectivity (D*) was calculated and compared side by side with D* of market dominating infrared detectors.

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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2015.0331
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