access icon free InP/InGaAs double heterojunction bipolar transistors with BVCEO = 12 V and f max = 470 GHz

© The Institution of Engineering and Technology
Received 25/01/2015, Published 02/04/2015

0.25 μm emitter InP/InGaAs double heterojunction bipolar transistors (DHBTs) are presented that simultaneously exhibit a high collector current density (J c) of more than 3 mA/μm2 and high breakdown voltage (BVCEO) of 12 V. The DHBTs consist of a 30 nm-thick InGaAs base, 250 nm-thick InGaAs/InAlGaAs/InP collector and 150 nm-thick n-doped InP field buffer. Since the doping level of the InP field buffer is relatively high, only the InGaAs/InAlGaAs/InP collector is depleted at low V CE. Thus, the DHBTs can provide f t = 173 GHz and f max = 470 GHz at J c = 3.5 mA/μm2. On the other hand, at a high V CE, both the InGaAs/InAlGaAs/InP collector and InP field buffer are depleted. Therefore, the effective depletion thickness increases, which results in a BVCEO of 12 V. These results indicate that the use of the InP field buffer provides both high-speed performance and high BVCEO.

Inspec keywords: III-V semiconductors; indium compounds; current density; heterojunction bipolar transistors; gallium arsenide; aluminium compounds; semiconductor doping

Other keywords: size 30 nm to 250 nm; wavelength 0.25 mum; double heterojunction bipolar transistors; voltage 12 V; high-speed performance; effective depletion thickness; high breakdown voltage; doping level; field buffer; high collector current density; InGaAs-InAlGaAs-InP; frequency 470 GHz to 173 GHz

Subjects: Semiconductor doping; Bipolar transistors

References

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      • 2. Bouvier, Y., Nagatani, M., Nakamura, M., Murata, K., Tezuka, K., Uchino, H., Uneme, S., Gotou, T.: ‘A 9 V gain-controlled dual-channel limiting driver in InP DHBT technology for 100 Gbps DP-QPSK optical communications’. Proc. Topical Workshop on Heterostructure Microelectronics, Hakodate, Japan, September 2013, pp. 9–10.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2014.4503
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