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Design and measurement of class EF2 power oscillator

Design and measurement of class EF2 power oscillator

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A class EF2 power oscillator designed in standard 130 nm CMOS at 2.5 GHz frequency is presented. The oscillator relies on a direct path based on a power amplifier and a feedback path based on passive elements and an MOS varactor. Class EF2 is used to reduce voltage stress across the switch, enabling a higher output power for modern transistors with low breakdown voltage. The measurement on a class EF2 power oscillator at radio frequency (RF) is presented for the first time. The circuit achieves 17.65 dBm output power from a 2.5 V supply voltage with 27.1% DC-RF efficiency and presents a 150 MHz tuning range. The measured phase noise is −101.6 dBc/Hz at 1 MHz offset. The circuit was implemented in standard 130 nm CMOS technology and consumed a total area of 1.95 mm2. To the authors' knowledge this class EF2 power circuit has never been presented either at RF frequencies or in an integrated technology.

References

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      • 4. Lin, C., et al: ‘A fully integrated 2.4 GHz 0.5 W high efficiency class-E voltage controlled oscillator in 0.15 um PHEMT process’. 2011 Asia-Pacific Microwave Conf. Proc. (APMC), Melbourne, Australia, December, 2011, pp. 864867.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2014.4295
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