Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs

Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs

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Bandwidth measurements of deep ultra-violet micro-light-emitting diode (LED) electroluminescence centred at 250 nm using a multiple quantum well aluminium gallium nitride (AlGaN)-based LED structure grown on a sapphire substrate is presented. By controlled etching of the wafer surface, parabolically shaped micro-LED structures were formed to enhance light emission through the substrate. Devices were tested on-wafer and bandwidth measurements were carried out on individual emission peaks from the devices. A bandwidth of more than 20 MHz was achieved on the 250 nm peak.


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      • 9. Akhter, M., Zubialevich, V., Eason, C., Maaskant, P., Quan, Z., Parbrook, P., O'Brien, P., Corbett, B.: ‘Fibre-coupled light emitting diodes with peak emission at 250 nm’. Proc. 7th WBG Semiconductor and Components Workshop, Rome, Italy, September 2014, pp. 275282.

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