access icon free AC analysis of temperature effects on conversion efficiency of CuInGaSe2 solar cells

The temperature effect on a CuInGaSe2 (CIGS) solar cell was investigated in the temperature range −10 to 80°C using direct current (DC) and alternating current (AC) characteristic analysis of CIGS solar cells. The change rates of short-circuit current density (J sc), open-circuit voltage (V oc), fill factor (FF) and efficiency (η) with respect to temperature were investigated. In addition, the variation of impedance, total capacitance and dynamic resistance due to the temperature change implied that the width of the depletion region in a p–n junction shrank, and the effective minority carrier lifetime (τ eff) decreased. Consequently, J sc changed slightly due to the balance between the variation of the energy bandgap (E g) and τ eff. However, V oc linearly decreased due to the relationship of E g when the temperature increased. From these results, it has been concluded that V oc plays an important role in the characteristics of the CIGS solar cell with change of temperature.

Inspec keywords: minority carriers; ternary semiconductors; current density; carrier lifetime; indium compounds; p-n junctions; gallium compounds; copper compounds; solar cells; short-circuit currents

Other keywords: conversion efficiency; alternating current characteristic analysis; temperature -10 C to 80 C; p-n junction; CuInGaSe2; energy bandgap; CIGS solar cell; fill factor; AC analysis; dynamic resistance; direct current characteristic analysis; short-circuit current density; minority carrier lifetime; temperature effects; open-circuit voltage

Subjects: Photoelectric conversion; solar cells and arrays; Solar cells and arrays

References

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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2014.3257
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