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InAs/GaAs pip quantum dots-in-a-well infrared photodetectors operating beyond 200 K

InAs/GaAs pip quantum dots-in-a-well infrared photodetectors operating beyond 200 K

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High-temperature operating performance of pip quantum dots-in-a-well infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped self-assembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated pip QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.

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      • 3. Höglund, L., Holtz, P.O., Ouattara, L., Asplund, C., Wang, Q., Almqvist, S., Petrini, E., Malm, H., Borglind, J., Smuk, S., Mikkelsen, A., Lundgren, E., Pettersson, H., Anderssona, J.Y.: ‘Quantum dots-in-a-well infrared photodetectors for long wavelength infrared detection’, Proc. SPIE – Int. Soc. Opt. Eng., 2006, 6401, p. 640109.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2014.2437
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