© The Institution of Engineering and Technology
The fabrication of metal-base transistors (MBTs) based on InGaZnO at room temperature is reported for the first time. With a suitable oxygen doping to the sputtering-deposited InGaZnO film and an HfSiO interlayer, improved diode performances with enhanced Schottky barrier heights of 0.70 and 0.66 eV are obtained for the base/collector (Ti/InGaZnO) and base/emitter (Au/HfSiO/InGaZnO) junctions, respectively. InGaZnO MBT using a Ti(10 nm)/Au(10 m)/HfSiO(5 nm) dual metal base shows a high common-emitter current gain (β) 840–310 at V CE = 2 V and I B ranging from 1 to 10 nA.
References
-
-
1)
-
9. Chasin, A., Nag, M., Bhoolokam, A., Myny, K., Steudel, S., Schols, S., Genoe, J., Gielen, G., Heremans, P.: ‘Gigahertz operation of a-IGZO Schottky Diodes’, IEEE Trans. Electron Devices, 2013, 60, (10), pp. 3407–3412 (doi: 10.1109/TED.2013.2275250).
-
2)
-
4. Yajima, T., Hikita, Y., Hwang, H.Y.: ‘A heteroepitaxial perovskite metal-base transistor’, Nat. Mater., 2011, 10, pp. 198–201 (doi: 10.1038/nmat2946).
-
3)
-
10. Brillson, L.J., Lu, Y.: ‘ZnO Schottky barriers and ohmic contacts’, J. Appl. Phys., 2011, 109, p. 121301 (doi: 10.1063/1.3581173).
-
4)
-
12. Crowell, C.R., Sze, S.M.: ‘Quantum-mechanical reflection of electrons at metal-semiconductor barriers: electron transport in semiconductor-metal-semiconductor structures’, J. Appl. Phys., 1966, 37, pp. 2683–2689 (doi: 10.1063/1.1782103).
-
5)
-
6. Yusoff, A.R.b.M., Song, Y., Schulz, D., Holz, E., Shuib, S.A.: ‘N-type metal-base organic transistor’, IEEE Trans. Nanotechnol., 2012, 11, (2), pp. 352–354 (doi: 10.1109/TNANO.2011.2173210).
-
6)
-
3. Serbena, J.P.M., Huang, J.Y., Ma, D., Wang, Z.Y., Hummelgen, I.A.: ‘Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics’, Org. Electron., 2009, 10, pp. 357–362 (doi: 10.1016/j.orgel.2008.11.001).
-
7)
-
5. Zhao, K., Deng, J., Wu, X., Cheng, X., Wei, J., Yin, S.: ‘Fabrication and characteristics of permeable-base organic transistors based on co-evaporated pentacene: Al base’, Org. Electron., 2011, 12, pp. 1003–1009 (doi: 10.1016/j.orgel.2011.03.028).
-
8)
-
11. Lien, C.-D., So, F.C.T., Nicolet, M.-A.: ‘An improved forward I–V method for nonideal Schottky diodes with high series resistance’, IEEE Trans. Electron Devices, 1984, 31, (10), pp. 1502–1503 (doi: 10.1109/T-ED.1984.21739).
-
9)
-
7. Huang, J., Ma, D., Hummelgen, I.A.: ‘Performance of hybrid p-type vertical transistors with poly(N-vinylcarbazole) as emitter and the transfer mechanism of charge carriers through the base’, Semicond. Sci. Technol., 2013, 28, p. 115001 (doi: 10.1088/0268-1242/28/11/115001).
-
10)
-
8. Kamiya, T., Nomura, K., Hosono, H.: ‘Present status of amorphous In-Ga-Zn-O thin-film transistors’, Sci. Technol. Adv. Mater., 2010, 11, p. 004305.
-
11)
-
2. Sze, S.M., Gummel, H.K.: ‘Appraisal of semiconductor-metal-semiconductor transistor’, Solid-State Electron., 1966, 9, pp. 751–769 (doi: 10.1016/0038-1101(66)90116-X).
-
12)
-
1. Balkan, N.: ‘Hot electrons in semiconductors: physics and devices’ (Clarendon Press, Oxford, UK, 1998).
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