access icon free InGaZnO metal-base transistor with high current gain

The fabrication of metal-base transistors (MBTs) based on InGaZnO at room temperature is reported for the first time. With a suitable oxygen doping to the sputtering-deposited InGaZnO film and an HfSiO interlayer, improved diode performances with enhanced Schottky barrier heights of 0.70 and 0.66 eV are obtained for the base/collector (Ti/InGaZnO) and base/emitter (Au/HfSiO/InGaZnO) junctions, respectively. InGaZnO MBT using a Ti(10 nm)/Au(10 m)/HfSiO(5 nm) dual metal base shows a high common-emitter current gain (β) 840–310 at V CE = 2 V and I B ranging from 1 to 10 nA.

Inspec keywords: gold; titanium; thin film transistors; hafnium compounds; indium compounds; semiconductor doping; semiconductor materials; semiconductor diodes; sputtered coatings; zinc compounds; Schottky barriers; gallium compounds

Other keywords: oxygen doping; current 1 nA to 10 nA; base/emitter junctions; interlayer; Ti-Au-HfSiO; Schottky barrier heights; voltage 2 V; diode performances; sputtering-deposited film; high common-emitter current gain; Au-HfSiO-InGaZnO; base/collector junctions; temperature 293 K to 298 K; size 5 nm to 10 nm; metal-base transistor; Ti-InGaZnO

Subjects: Junction and barrier diodes; Semiconductor doping; Other field effect devices

References

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      • 8. Kamiya, T., Nomura, K., Hosono, H.: ‘Present status of amorphous In-Ga-Zn-O thin-film transistors’, Sci. Technol. Adv. Mater., 2010, 11, p. 004305.
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      • 1. Balkan, N.: ‘Hot electrons in semiconductors: physics and devices’ (Clarendon Press, Oxford, UK, 1998).
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2014.2201
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