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InGaZnO metal-base transistor with high current gain

InGaZnO metal-base transistor with high current gain

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The fabrication of metal-base transistors (MBTs) based on InGaZnO at room temperature is reported for the first time. With a suitable oxygen doping to the sputtering-deposited InGaZnO film and an HfSiO interlayer, improved diode performances with enhanced Schottky barrier heights of 0.70 and 0.66 eV are obtained for the base/collector (Ti/InGaZnO) and base/emitter (Au/HfSiO/InGaZnO) junctions, respectively. InGaZnO MBT using a Ti(10 nm)/Au(10 m)/HfSiO(5 nm) dual metal base shows a high common-emitter current gain (β) 840–310 at V CE = 2 V and I B ranging from 1 to 10 nA.

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      • 8. Kamiya, T., Nomura, K., Hosono, H.: ‘Present status of amorphous In-Ga-Zn-O thin-film transistors’, Sci. Technol. Adv. Mater., 2010, 11, p. 004305.
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