access icon free UV electroluminescence from p-ZnO:P/n-ZnO homojunction diode

The reliability of p-type ZnO thin films obtained by phosphorus implantation, using plasma-immersion ion implantation, followed by rapid thermal annealing is reported. Also reported is the fabrication of a ZnO-based homojunction light-emitting diode. Low-temperature photoluminescence measurements after six months showed a dominant free electron-to-acceptor peak for samples annealed at 900 and 1000°C, confirming the formation of p-type films. Room-temperature electroluminescence spectra for the p-ZnO:P/n-ZnO homojunction diode revealed ultraviolet (UV) emission at 3.18 eV; however, the dominant peak was observed at 1.8 eV because of a deep-level defect peak. Achieving dominant UV emission requires further optimisation of the device structure.

Inspec keywords: ion implantation; electroluminescence; light emitting diodes; zinc compounds; annealing; ultraviolet spectra; phosphorus; II-VI semiconductors

Other keywords: ZnO:P-ZnO; ultraviolet emission; plasma-immersion ion implantation; homojunction diode; temperature 900 C; free electron-to-acceptor peak; light emitting diode; temperature 1000 C; electron volt energy 3.18 eV; electron volt energy 1.8 eV; electroluminescence spectra; phosphorus implantation; UV electroluminescence

Subjects: Semiconductor doping; Annealing processes in semiconductor technology; Light emitting diodes

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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2014.2055
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