References

• 1. 1)
     • 13. Du, G., Liu, W., Bian, J., Hu, L., Liang, H., Wang, X., Liu, A., Yang, T.: ‘Room temperature defect related electroluminescence from ZnO homojunctions grown by ultrasonic spray pyrolysis’, Appl. Phys. Lett., 2006, 89, p. 052113 (doi: 10.1063/1.2245217).
  2. 2)
     • 10. Kim, K.K., Kim, H.S., Hwang, D.K., Lim, J.H., Park, S.J.: ‘Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant’, Appl. Phys. Lett., 2003, 83, pp. 63–65 (doi: 10.1063/1.1591064).
  3. 3)
     • 9. Tsukazaki, A., Kubota, M., Ohtomo, A., Onuma, T., Ohtani, K., Ohno, H., Chichibu, S.F., Kawasaki, M.: ‘Blue light-emitting diode based on ZnO’, Jpn. J. Appl. Phys., 2005, 44, p. L643 (doi: 10.1143/JJAP.44.L643).
  4. 4)
     • 6. Liu, W., Gu, S., Ye, J., Zhu, S., Liu, S., Zhou, X., Zhang, R., Shi, Y., Zheng, T., Hang, Y.: ‘Blue–yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique’, Appl. Phys. Lett., 2006, 88, pp. 092101–092103 (doi: 10.1063/1.2169908).
  5. 5)
     • C.H. Park , S.B. Zhang , S.H. Wei . Origin of p-type doping difficulty in ZnO: the impurity perspective. Phys. Rev. B
  6. 6)
     • 11. Lin, S., Lu, J., Ye, Z., He, H., Gu, X., Chen, L., Huang, J., Zhao, B.: ‘p-type behavior in Na-doped ZnO films and ZnO homojunction light-emitting diodes’, Solid State Commun., 2008, 148, pp. 25–28 (doi: 10.1016/j.ssc.2008.07.028).
  7. 7)
     • A. Tsukazaki , A. Ohtomo , T. Onuma , M. Ohtani , T. Makino , M. Sumiya , K. Ohtani , S.F. Chichibu , S. Fuke , Y. Segawa , H. Ohno , H. Koinuma , M. Kawasaki . Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO. Nature Mater. , 42 - 46
  8. 8)
     • 2. Vaithianathan, V., Lee, B.-T., Kim, S.S.: ‘Pulsed-laser-deposited p-type ZnO films with phosphorus doping’, J. Appl. Phys., 2005, 98, p. 043519 (doi: 10.1063/1.2011775).
  9. 9)
     • 8. Nagar, S., Chakrabarti, S.: ‘Evidence of strong acceptor peaks in ZnO thin films doped with phosphorus by plasma immersion ion implantation’, J. Lumin., 2013, 137, pp. 55–58 (doi: 10.1016/j.jlumin.2012.12.043).
  10. 10)
      • 5. Lim, J.M., Kang, C.K., Kim, K.K., Park, I.K., Hwang, D.K., Park, S.J.: ‘UV electroluminescence emission from ZnO light emitting diodes grown by high temperature radiofrequency sputtering’, Adv. Mater., 2006, 18, pp. 2720–2724 (doi: 10.1002/adma.200502633).
  11. 11)
      • 12. Liang, H., Feng, Q., Sun, J., Zhao, J., Bian, J., Hu, L., Zhang, H., Luo, Y., Du, G.: ‘Room temperature electroluminescence from the ZnO homojunction grown on an n + -Si substrate by metal–organic chemical vapor deposition’, Semicond. Sci. Technol., 2008, 23, p. 025014 (doi: 10.1088/0268-1242/23/2/025014).
  12. 12)
      • 7. Gupta, D.: ‘Plasma immersion ion implantation (PIII) process – physics and technology’, Int. J. Adv. Technol., 2011, 2, (4), pp. 471–490.
  13. 13)
      • 6. Look, D.C.: ‘Recent advances in ZnO materials and devices’, Mater. Sci. Eng. B, 2001, 80, pp. 383–387 (doi: 10.1016/S0921-5107(00)00604-8).