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Performance improved by point-contact electrodes and SiO2/SiN X layers at rear

Performance improved by point-contact electrodes and SiO2/SiN X layers at rear

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The rear point-contact fabricated through the laser-opening technique for mass production was applied on the photovoltaic cells. Laser opening, different layers for passivation (SiO2) and protection (SiN X ) were employed to investigate their impact on the performances of solar cells. The SiN X layer protects the SiO2 layer from being burnt through by aluminium paste at the co-firing step. A conversion efficiency (η) of 16.91% with an open-circuit voltage of 628 mV was obtained for the optimal cell, a stack structure with SiO2 and SiN X layers, which also achieves a lower contact resistance of 6.66 mΩ·cm2 and a higher light-beam-induced current of 80.77 mA/cm2. The optimal cell also showed longer lifetime and 3–4% increased quantum efficiency in the visible wavelength range. Therefore, the developed process has simplicity and reliability, is fast and cost-effective and could be applied to industrial applications.

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