In situ integrated tuner approach for load-pull measurement of Si/SiGe:C HBT at 200 GHz

I. Hasnaoui; A. Pottrain; T. Lacave; P. Chevalier; D. Gloria; C. Gaquiere

In situ integrated tuner approach for load-pull measurement of Si/SiGe:C HBT at 200 GHz

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Author(s): I. Hasnaoui ¹ ; A. Pottrain ² ; T. Lacave ² ; P. Chevalier ² ; D. Gloria ² ; C. Gaquiere ¹
- Affiliations: 1: IEMN-CNRS, Villeneuve d'Ascq, France;
  2: STMicroelectronics, Crolles, France
Source: Volume 50, Issue 15, 17 July 2014, p. 1070 – 1072
DOI: 10.1049/el.2014.0186 , Print ISSN 0013-5194, Online ISSN 1350-911X

Received 17/01/2014, Published 04/07/2014

Load impedance variations were obtained using an innovative integrated tuner at G-band. The 200 GHz load-pull measurements on a silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) are presented. First, the linearity of the integrated tuner is checked. Then, the main load-pull characteristics are extracted from a 0.13 × 3 µm² emitter area SiGe HBT. The aim of this study is to provide a solution to avoid losses related to probes and commercial tuners. Thereby, from design to measurements, power setup architecture, calibration and performances at 200 GHz are performed in a non-50 Ω environment. Finally, comparisons between measurements and simulation from a high current model (HICUM) show good agreement, demonstrating the capability of the measurement approach.

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In situ integrated tuner approach for load-pull measurement of Si/SiGe:C HBT at 200 GHz

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