Curvature-corrected low-noise sub-bandgap reference in 28 nm CMOS technology
A sub-bandgap circuit architecture employed to achieve a precision reference in 28 nm CMOS technology is described. The 500 mV voltage reference exhibits < 10 ppm/°C drift from −40 to 125°C and 5.5 μV of root-mean-square (RMS) noise in a 0.1–10 Hz bandwidth, dissipates 500 μW of power on a 1.2 V supply and occupies 0.09 mm².