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1887

access icon free Curvature-corrected low-noise sub-bandgap reference in 28 nm CMOS technology

A sub-bandgap circuit architecture employed to achieve a precision reference in 28 nm CMOS technology is described. The 500 mV voltage reference exhibits < 10 ppm/°C drift from −40 to 125°C and 5.5 μV of root-mean-square (RMS) noise in a 0.1–10 Hz bandwidth, dissipates 500 μW of power on a 1.2 V supply and occupies 0.09 mm².

References

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      • 2. Annema, A.J.: ‘A 0.0025 mm² bandgap voltage reference for 1.1 V supply in standard 0.16 µm CMOS’. IEEE Int. Solid-State Circuits Conf. (ISSCC), San Francisco, USA, 19–23 February 2012, pp. 364366.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2013.3952
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content/journals/10.1049/el.2013.3952
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