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Coding schemes for multi-level Flash memories that are intrinsically resistant against unknown gain and/or offset using reference symbols

Coding schemes for multi-level Flash memories that are intrinsically resistant against unknown gain and/or offset using reference symbols

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Coding schemes for storage channels, such as optical recording and non-volatile memory (Flash), with unknown gain and offset are presented. In its simplest case, the coding schemes guarantee that a symbol with a minimum value (floor) and a symbol with a maximum (ceiling) value are always present in a codeword so that the detection system can estimate the momentary gain and the offset. The results of the computer simulations show the performance of the new coding and detection methods in the presence of additive noise.

References

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      • 1. Jiang, A., Mateescu, R., Schwartz, M., Bruck, J.: ‘Rank modulation for Flash memories’, IEEE Trans. Inform. Theory, 2006, IT-55, (6), pp. 26592673.
    2. 2)
      • 2. Bouwhuis, G., Braat, J., Huijser, A., Pasman, J., van Rosmalen, G., Immink, K.A.S.: ‘Principles of optical disc systems’ (Adam Hilger, Bristol and Boston, 1985).
    3. 3)
      • 3. Immink, K.A.S.: ‘Coding methods for high-density optical recording’, Philips J. Res., 1986, 41, pp. 410430.
    4. 4)
      • 4. Immink, K.A.S.: ‘High-rate maximum runlength constrained coding schemes using nibble replacement’, IEEE Trans. Inform. Theory, 2012, IT-58, (10), pp. 65726580 (doi: 10.1109/TIT.2012.2204034).
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