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access icon free Application of graphene oxide for reduction of thermal resistance of high-power laser diodes

© The Institution of Engineering and Technology
Received 01/10/2013, Published
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Improvement of the removal efficiency of the upper (directed towards the n-side) heat flux from high-power laser diodes is proposed by providing the graphene-oxide (GO) deposit from the top of the p-down-mounted chips. Resulting decrease of the device's thermal resistance has been found in reduced red shift of the spectral characteristics connected with the drive current increase (compared with ‘no GO deposit’ device). Providing GO in the form of aqueous suspension and then drying at room temperature is relatively easy and repeatable. Experimental step-by-step processing and characterisations indicate dominant heat removal from the chip's side walls rather than from its n-contact surface.

Inspec keywords: graphene; drying; semiconductor lasers; thermal resistance; red shift; cooling

Other keywords: upper heat flux; temperature 293 K to 298 K; aqueous suspension; CO; removal efficiency; thermal resistance reduction; high power laser diodes; drying process; graphene oxide deposit; step-by-step processing

Subjects: Lasing action in semiconductors; Product packaging; Design of specific laser systems; Fullerenes, carbon nanotubes, and related materials (engineering materials science); Preparation of graphene and graphene-related materials, intercalation compounds, and diamond; Semiconductor lasers

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