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access icon free Pulsed characterisation of trapping dynamics in AlGaN/GaN HEMTs

© The Institution of Engineering and Technology
Received 11/07/2013, Published
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Time-domain pulsed I–V measurements dedicated to characterising and modelling the time-dependent trapping phenomena of wide band-gap AlGaN/GaN high electron mobility transistors (HEMTs) are presented. The influence of temperature, electric field and their mutual interaction on trap activation and time constants are investigated and illustrated in the case of 2 × 75 × 0.15 µm2 AlGaN/GaN HEMTs from the III–V Lab. These measurements show that the most influential parameter on trap activation is the electric field induced by the highest drain voltage V DS-max reached during a pulse sequence, which leads to the drain current collapse. These characterisations are intended to develop and improve new nonlinear models of GaN HEMTs, taking into account the dynamics of traps for modulated signals.

Inspec keywords: III-V semiconductors; high electron mobility transistors; semiconductor device measurement; aluminium compounds; modulation; time-domain analysis; gallium compounds; wide band gap semiconductors

Other keywords: time-dependent trapping phenomena; drain current collapse; HEMT; signal modulation; wide band-gap high electron mobility transistor; time-domain pulsed I-V measurement; pulse sequence characterisation; trap activation; AlGaN-GaN

Subjects: Other field effect devices

References

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