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Surface-activating-bonding-based low-resistance Si/III-V junctions

Surface-activating-bonding-based low-resistance Si/III-V junctions

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The electrical properties of pn junctions, with various semiconductor materials with different doping concentrations fabricated by using surface-activated-bonding (SAB), were investigated by measuring their current-voltage (I-V) characteristics. The I-V characteristics of p +-GaAs/n ++-Si, p +-GaAs/n +-Si, p +-Si/n +-Si, p ++-Si/n +-InGaP, and p +-Si/n +-InGaP junctions showed ohmic-like properties. The interface resistance and the resultant electrical loss decreased with increasing impurity concentration at the interface. These results demonstrate the significance of SAB for fabricating tandem solar cells.

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