Fabrication methods for performance improvement of Cu(In,Ga)Se2 thin film solar cells
- Author(s): P.H. Choi 1 ; D.H. Baek 1 ; H.J. Kim 1 ; K.S. Kim 1 ; H.S. Park 1 ; S.S. Kim 1 ; B.D. Choi 1
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View affiliations
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Affiliations:
1:
College of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Republic of Korea
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Affiliations:
1:
College of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Republic of Korea
- Source:
Volume 49, Issue 24,
21 November 2013,
p.
1561 – 1562
DOI: 10.1049/el.2013.1146 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Engineering and Technology
Received
04/04/2013,
Published
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Inspec keywords: ternary semiconductors; semiconductor thin films; sputter deposition; short-circuit currents; solar cells
Other keywords: thin film solar cells; chemical solution; power 3 kW; sputtering power conditions; buffer layer; molybdenum back-contact formation; H2O2; chemical bath deposition technique; short circuit current density; Cu(InGa)Se2; conversion efficiency; advanced fabrication methods; hydrogen peroxide; sputter power
Subjects: Other semiconductor materials; Photoelectric conversion; solar cells and arrays; Sputter deposition; Solar cells and arrays; Deposition by sputtering
References
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1. Rau, U., Schmidt, M., Jasenek, A., Hanna, G., Schock, H.W.: ‘Electrical characterization of Cu(In,Ga)Se2 thin-film solar cells and the role of defects for the device performance’, Sol. Energy Mater. Sol. Cells, 2001, 67, pp. 137–143 (doi: 10.1016/S0927-0248(00)00273-7).
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6. Rau, U., Schmitt, M., Engelhardt, F., Seifert, O., Parisi, J., Riedl, W., Rimmasch, J., Karg, F.: ‘Impact of Na and S incorporation on the electronic transport mechanisms of Cu(In,Ga)Se solar cells’, Solid State Commun., 1998, 107, pp. 59–63 (doi: 10.1016/S0038-1098(98)00154-9).
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9. Erslev, P.T., Lee, J.W., Shafarman, W.N., Cohen, J.D.: ‘The influence of Na on metastable defect kinetics in CIGS materials’, Thin Solid Films, 2009, 517, pp. 2277–2281 (doi: 10.1016/j.tsf.2008.10.140).
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