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Fabrication methods for performance improvement of Cu(In,Ga)Se2 thin film solar cells

Fabrication methods for performance improvement of Cu(In,Ga)Se2 thin film solar cells

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Two advanced fabrication methods are introduced: the hydrogen peroxide (H2O2)-added chemical bath deposition technique and molybdenum (Mo) back-contact formation under 3 kW sputter power. The parameters of the short circuit current density (J SC) and conversion efficiency (η) were improved over standard cells when the ZnS buffer layer was deposited in the H2O2-added chemical solution. Otherwise, the fill-factor and η were best at 3 kW Mo sputtering power conditions. Advanced fabrication methods are realised to improve cell performance without modifying the chemical composition of the Cu(In,Ga)Se2 absorption layer.


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