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access icon free Device characteristics of InAlSb/InAs and InAlSb/InAsSb HFETs

© The Institution of Engineering and Technology
Received 08/03/2013, Published

The successful fabrication of InAlSb/InAs and InAlSb/InAsSb HFETs using recessed gate technology is reported. Epitaxial growth, device fabrication and characterisation are discussed in this Letter. A comparison of the two kinds of HFETs shows that the use of Sb in the InAs channel layer can effectively reduce the gate leakage resulting from the band-to-band tunnelling. This improvement is primarily because of increased separation between the conduction band edge of the InAsSb channel layer and the valence band edge of the InAlSb top barrier layer. An InAlSb/InAsSb HFET with 2 μm gate length and 50 μm gate width shows I D = 596 mA/mm and gm = 1 S/mm.

Inspec keywords: aluminium compounds; indium compounds; III-V semiconductors; valence bands; arsenic compounds; high electron mobility transistors; tunnelling; wide band gap semiconductors; conduction bands

Other keywords: HFET; epitaxial growth; device characterisation; size 2 mum; channel layer; InAlSb-InAs; device fabrication; recessed gate technology; valence band edge; InAlSb-InAsSb; band-to-band tunnelling; top barrier layer; size 50 mum; conduction band edge; gate leakage reduction

Subjects: Other field effect devices

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