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access icon free Rapid synthesis of gallium oxide resistive random access memory by atomic force microscopy local anodic oxidation

© The Institution of Engineering and Technology
Received 01/03/2013, Published
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The fabrication of gallium oxide nanodots for the application of resistive random access memory (RRAM) using a process of atomic force microscopy (AFM) local anodic oxidation on an indium tin oxide conductive glass substrate is reported. In the atmospheric environment, an AFM probe tip contacts the gallium film locally. This gallium oxide nanodot acts as the insulator layer in a single unit of the RRAM. The structure describes the insulator layer (GaOx) sandwiched by the top (AFM tip) and bottom (Ga film) electrodes. Using current and voltage biased methods, the device switches from a high-resistance state (HRS) to a low-resistance state (LRS) and reset from LRS to HRS. Low read-voltage is used to distinguish the high/low resistance to present the digital data. Presented results show the ability of atomic force microscopy anodic oxidation to produce 300 nm diameter gallium oxide nanodots on glass substrates for potentially high density RRAMs.

Inspec keywords: atomic force microscopy; gallium compounds; anodisation; indium compounds; tin compounds; random-access storage

Other keywords: LRS; low read-voltage; ITO; data; size 300 nm; resistive random access memory; voltage biased methods; AFM probe contacts; low-resistance state; conductive glass substrate; top electrodes; high-resistance state; nanodots; GaOx; bottom electrodes; atmospheric environment; insulator layer; current biased methods; RRAM synthesis; atomic force microscopy; HRS; local anodic oxidation

Subjects: Memory circuits; Semiconductor storage; Surface treatment (semiconductor technology)

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