access icon free High-breakdown voltage and low on-resistance AlGaN/GaN on Si MOS-HEMTs employing an extended TaN gate on HfO2 gate insulator

© The Institution of Engineering and Technology
Received 12/01/2013, Published
Errata or comment

Proposed is a new extended gate towards a source in AlGaN/GaN metal-oxide-semiconductor–high-electron-mobility transistors (MOS-HEMTs) in order to increase breakdown voltage and reduce on-resistance. The TaN gate was isolated from the source by a 15 nm-thick RF-sputtered HfO2 gate insulator. A high breakdown voltage of 1410 V was measured as a result of the successfully blocked gate leakage current and surface passivation by the HfO2 gate insulator. The extended gate towards the source was an effective method to improve the on-resistance and drain current density by eliminating the gate-source space. The proposed device with the extended gate exhibited low specific on-resistance of 2.28 mΩ·cm2 while that of the MOS-HEMT with the conventional structure was 2.91 mΩ·cm2. Also, maximum drain current density at the VGS of 2 V was increased from 332 to 420 mA/mm by the proposed extended TaN gate.

Inspec keywords: insulators; wide band gap semiconductors; III-V semiconductors; current density; aluminium compounds; gallium compounds; power MOSFET; hafnium compounds; silicon; tantalum compounds

Other keywords: extended gate; blocked gate leakage current; drain current density; blocked gate leakage surface; on-resistance density; high-breakdown voltage; RF-sputtered gate insulator; voltage 1410 V; Si; AlGaN-GaN; metal-oxide-semiconductor-high-electron-mobility transistors; voltage 2 V; MOS-HEMT

Subjects: Power semiconductor devices; Insulated gate field effect transistors

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Correspondence
This article has following corresponding article(s):
breaking down resistance