access icon free Localised back contact to ONO passivated c-Si solar cells using laser fired contact method

The localised back contact method for SiO2/SiNx/SiO2 (ONO) back surface passivated crystalline silicon solar cells has been investigated using a 1064 nm Nd:YAG laser. From the quasi-steady-state-photoconductance measurements, feasible passivation properties of effective carrier lifetime (τeff), back surface recombination velocity (Seff) and diffusion length (LD) with the ONO passivated layer rather than with the SiNx single layer have been confirmed. Localised point back contacts were formed varying with dot diameter and dot spacing and then the cell performance was characterised from solar simulator measurements. It was confirmed that the cell performance is closely related to the back contact area which is determined by dot diameter and spacing, and dot spacing is the more crucial factor to determine the cell performance than diameter variations.

Inspec keywords: silicon compounds; solar cells; solid lasers; passivation; silicon

Other keywords: dot diameter; dot spacing; back surface passivated crystalline silicon solar cells; back surface recombination velocity; solar simulator measurements; ONO passivated c-Si solar cells; diffusion length; feasible passivation properties; quasi-steady-state-photoconductance measurements; localised back contact method; carrier lifetime; laser fired contact method; lcalised back contact; Nd:YAG laser; ONO passivated layer; wavelength 1064 nm

Subjects: Photoelectric conversion; solar cells and arrays; Solar cells and arrays

References

    1. 1)
      • 3. Hilali, M.M., Gee, J.M., Hacke, P.: ‘Bow in screen-printed back-contact industrial silicon solar cells’, Sol. Energy Mater. Sol. Cells, 2007, 91, pp. 12281233 (doi: 10.1016/j.solmat.2007.04.010).
    2. 2)
      • 5. Hofmann, M., Kambor, S., Schmidt, C., Grambole, D., Rentsch, J., Glunz, S.W., Preu, R.: ‘PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells’, Adv. OptoElectron., 2008, 2008, pp. 1–11 (doi: 10.1155/2008/485467).
    3. 3)
      • 4. Schniderlöchner, E., Preu, R., Lüdemann, R., Glunz, S.W.: ‘Laser-fired Reaa contacts for crystalline silicon solar cells’, Prog. Photovolt: Res. Appl., 2002, 10, pp. 2934 (doi: 10.1002/pip.422).
    4. 4)
      • 6. Schultz, O., Hofmann, M., Glunz, S.W., Willeke, G.P.: ‘Silicon oxide/silicon nitride stack system for 20 % efficient silicon solar cells’. Proc. 31st IEEE, Photovoltaic Specialists Conf., Florida, USA, January 2005, pp. 872876.
    5. 5)
      • 1. Tucci, M., Talgorn, E., Serenelli, L., Salza, E., Izzi, M., Mangiapane, P.: ‘Laser fired back contact for silicon solar cells’, Thin Solid Films, 2008, 516, pp. 67676770 (doi: 10.1016/j.tsf.2007.12.079).
    6. 6)
      • 2. Lee, D.Y., Lee, H.H., Ahn, J.Y., Park, H.J., Kim, J.H., Kwon, H.J., Jeong, J.W.: ‘A new back surface passivation stack for thin crystalline silicon solar cells with screen-printed back contacts’, Sol. Energy Mater. Sol. Cells, 2011, 95, pp. 2629 (doi: 10.1016/j.solmat.2010.05.004).
    7. 7)
      • 7. Rodofili, A., Fell, A., Hopman, S., Mayer, K., Willeke, G.P., Kray, D., Glunz, S.W.: ‘Local p-type back surface fields via laser chemical processing (LCP): first experiments’. 23rd Eur. Photovoltaics Solar Energy Conf. & Exhibition, Valencia, Spain, 2008, pp. 18081811.
    8. 8)
    9. 9)
    10. 10)
    11. 11)
    12. 12)
    13. 13)
      • Rodofili, A., Fell, A., Hopman, S., Mayer, K., Willeke, G.P., Kray, D., Glunz, S.W.: `Local p-type back surface fields via laser chemical processing (LCP): first experiments', 23rdEur. Photovoltaics Solar Energy Conf. & Exhibition, 2008, Valencia, Spain, p. 1808–1811.
    14. 14)
      • Schultz, O., Hofmann, M., Glunz, S.W., Willeke, G.P.: `Silicon oxide/silicon nitride stack system for 20 % efficient silicon solar cells', Proc. 31st IEEE, Photovoltaic Specialists Conf., Florida, January 2005, USA, p. 872–876.
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2012.4465
Loading

Related content

content/journals/10.1049/el.2012.4465
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Correspondence
This article has following corresponding article(s):
in brief