access icon free Investigation of transient photocurrent response of triple pn junction structure

© The Institution of Engineering and Technology
Received 10/12/2012, Published

The transient photocurrent response of a vertically stacked triple pn junction structure, which can detect three different colours simultaneously, is investigated. The triple pn junction structure is designed based on the effect that the penetration depth in silicon depends on light wavelength. To increase the bandwidth of optical sensor systems the transient photocurrent response is a critical parameter. The transient response is measured by applying three different light wavelengths to this triple junction structure. This triple pn junction structure is fabricated in a 0.6 µm BiCMOS technology using a p−p+ epitaxial wafer without any process modification. Based on the measurement results, it can be concluded that this triple pn junction structure can be applied to optical sensors without optical filters and the total data rate of this structure can reach up to 100 Mbit/s.

Inspec keywords: semiconductor epitaxial layers; BiCMOS integrated circuits; photoconductivity; p-n junctions; transient response; integrated optoelectronics; optical sensors

Other keywords: vertically stacked triple pn junction structure; p−p+ epitaxial wafer; transient photocurrent response; silicon penetration depth; BiCMOS technology; transient response; size 0.6 mum; light wavelength; optical sensor systems

Subjects: Mixed technology integrated circuits; Sensing devices and transducers; Integrated optoelectronics; Sensing and detecting devices

References

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