http://iet.metastore.ingenta.com
1887

Nonvolatile memory device based on SiO2/GaN/AlGaN/GaN heterostructure

Nonvolatile memory device based on SiO2/GaN/AlGaN/GaN heterostructure

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Demonstrated is a nonvolatile memory device based on a SiO2/GaN/AlGaN/GaN heterostructure in which the upper GaN layer acted as a storage node. Charges were stored in and released from the upper GaN layer by applying positive and negative gate biases, respectively. The top SiO2 layer acted as a blocking layer. The threshold voltage shift was ∼ 3 V between the program and erase modes and the retention characteristics were very stable over 10000 s.

References

    1. 1)
      • 1. Nakamura, S., Mukai, T., Senoh, M.: ‘Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes’, Appl. Phys. Lett., 1994, 64, pp. 16871689 (doi: 10.1063/1.111832).
    2. 2)
      • 2. Wu, Y.F., Kapolnek, D., Ibbetson, J.P., Parikh, P., Keller, B.P., Mishra, U.K.: ‘Very-high power density AlGaN/GaN HEMTs’, IEEE Trans. Electron Devices, 2001, 48, pp. 586590.
    3. 3)
      • 3. Lee, J.-G., Park, B.-R., Lee, H.-J., Lee, M., Seo, K.-S., Cha, H.-Y.: ‘State-of-the-art AlGaN/GaN-on-Si heterojunction field effect transistors with dual field plates’, Appl. Phys. Express, 2012, 5, p. 066502 (doi: 10.1143/APEX.5.066502).
    4. 4)
      • 4. Cha, H.-Y., Wu, H., Chae, S., Spencer, M.G., ‘Gallium nitride nanowire nonvolatile memory device’, J. Appl. Phys., 2006, 100, p. 024307 (doi: 10.1063/1.2216488).
    5. 5)
      • 5. Hanafi, H.I., Tiwari, S., Khan, I.: ‘Fast and long retention-time nano-crystal memory’, IEEE Trans. Electron Devices, 1996, 43, pp. 15531558 (doi: 10.1109/16.535349).
    6. 6)
      • 6. Eitan, B., Pavan, P., Bloom, I., Aloni, E., Frommer, A., Finzi, D.: ‘NROM: a novel localized trapping, 2-bit nonvolatile memory cell’, IEEE Electron Device Lett., 2000, 21, pp. 543545 (doi: 10.1109/55.877205).
    7. 7)
      • 7. Ambacher, O., Smart, J., Shealy, J.R., Weimann, N.G., Chu, K., Murphy, M., Schaff, W.J., Eastman, L.F., Dimitrov, R., Wittmer, L., Stutzmann, M., Rieger, W., Hilsenbeck, J., ‘Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures’, J. Appl. Phys., 1999, 85, pp. 32223233 (doi: 10.1063/1.369664).
    8. 8)
      • 8. Lee, B., Kirkpatrick, C., Yang, X., Jayanti, S., Suri, R., Roberts, J., Misra, V., ‘Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics’. Proc. Electron Device Meeting, San Francisco, CA, USA, 2010, pp. 20.6.120.6.4.
    9. 9)
      • 9. Huang, S., Yang, S., Roberts, J., Chen, K.J.: ‘Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement’, Phys. Status Solidi C, 2012, 9, pp. 923926 (doi: 10.1002/pssc.201100302).
    10. 10)
      • 10. Klein, P.B., Binari, S.C., Ikossi, K., Wickenden, A.E., Koleske, D.D., Henry, R.L.: ‘Effect of deep traps on sheet charge in AlGaN/GaN high electron mobility transistors’, Electron. Lett., 2001, 37, pp. 15501551 (doi: 10.1049/el:20011040).
    11. 11)
      • 11. Park, B.-R., Lee, J.-G., Lee, H.-J., Lim, J., Seo, K.-S., Cha, H.-Y.: ‘Breakdown voltage enhancement in field plated AlGaN/GaN-on-Si HFETs using mesa-first prepassivation process’, Electron. Lett., 2012, 48, pp. 181182 (doi: 10.1049/el.2011.3778).
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2012.4083
Loading

Related content

content/journals/10.1049/el.2012.4083
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Correspondence
This article has following corresponding article(s):
in brief
This is a required field
Please enter a valid email address