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access icon free EMI susceptibility of DTMOS opamps

The susceptibility to electromagnetic interference (EMI) of an amplifier based on dynamic threshold voltage MOS transistors (DTMOSs) has been analysed and improved thanks to an easy modification of the input differential stage. The final opamp has been designed in a 0.18μm standard CMOS process.

http://iet.metastore.ingenta.com/content/journals/10.1049/el.2012.3941
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content/journals/10.1049/el.2012.3941
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