Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

access icon free Arsenic diffusion in boron-doped germanium

Arsenic (As) diffusion in germanium (Ge) has been studied by implanting As in a Ge substrate with high boron (B) background doping. The high hole density induced by the B doping suppresses negatively charged vacancies (V) in Ge. Under this condition, we have investigated the dependence of As diffusion on the dopant-vacancy pairs As+V0 by secondary ion mass spectroscopy. After rapid thermal annealing at 600−750°C, the chemical profiles of As do not change in the highly B doped Ge. Experimental results suggest that the As+V0 pairs are not the diffusion vehicles of As in Ge. Activation energy of the As+V0 pairs has to be larger than 3.25 eV.

References

    1. 1)
      • 2. Koffel, S., Kaiser, R.J., Bauer, A.J., Amon, B., Pichler, P., Lorenz, J., Frey, L., Scheiblin, P., Mazzocchi, V., Barnes, J.-P., Claverie, A.: ‘Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium’, Microelectron. Eng., 2011, 88, (4), pp. 458461 (doi: 10.1016/j.mee.2010.09.023).
    2. 2)
      • 3. Simoen, E., Vanhellemont, J.: ‘On the diffusion and activation of ion-implanted n-type dopants in germanium’, J. Appl. Phys., 2009, 106, pp. 103516.
    3. 3)
      • 5. Morin, F.J., Maita, J.P.: ‘Conductivity and Hall effect in the intrinsic range of germanium’, Phys. Rev., 1954, 94, (6), pp. 15251529 (doi: 10.1103/PhysRev.94.1525).
    4. 4)
      • 8. Vainonen-Ahlgren, E., Ahlgren, T., Likonen, J., Lehto, S., Keinonen, J., Li, W., Haapamaa, J.: ‘Identification of vacancy charge states in diffusion of arsenic in germanium’, Appl. Phys. Lett., 2000, 77, (5), pp. 690692 (doi: 10.1063/1.127087).
    5. 5)
      • 10. Mott, N.F., Gurney, R.W.: ‘Electronic processes in ionic crystals’, (Oxford University Press, Oxford, UK, 1948).
    6. 6)
      • 1. Chui, C.O., Kulig, L., Moran, J., Tsai, W., Saraswat, K.C.: ‘Germanium n-type shallow junction activation dependences’, Appl. Phys. Lett., 2005, 87, (9), pp. 091909 (doi: 10.1063/1.2037861).
    7. 7)
      • 7. Tsouroutas, P., Tsoukalas, D., Bracht, H.: ‘Experiements and simulation on diffusion and activation of codoped with arsenic and phosphorous germanium’, J. Appl. Phys., 2010, 108, p. 024903 (doi: 10.1063/1.3456998).
    8. 8)
      • 9. Uppal, S., Willoughby, A.F.W., Bonar, J.M., Cowern, N.E.B., Grasby, T., Morris, R.J.H., Dowsett, M.G.: ‘Diffusion of boron in germanium at 800–900°C’, J. Appl. Phys., 2004, 96, (3), pp. 13761380 (doi: 10.1063/1.1766090).
    9. 9)
      • 4. Shockley, W., Last, J.T.: ‘Statistics of the charge distribution for a localized flaw in a semiconductor’, Phys. Rev., 1957, 107, (2), pp. 392396 (doi: 10.1103/PhysRev.107.392).
    10. 10)
      • 6. Brotzmann, S., Bracht, H.: ‘Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanian,J. Appl. Phys., 2008, 103, p. 033508 (doi: 10.1063/1.2837103).
    11. 11)
    12. 12)
    13. 13)
    14. 14)
    15. 15)
    16. 16)
    17. 17)
      • N.F. Mott , R.W. Gurney . (1940) Electronic processes in ionic crystals.
    18. 18)
    19. 19)
    20. 20)
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2012.3444
Loading

Related content

content/journals/10.1049/el.2012.3444
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Correspondence
This article has following corresponding article(s):
inside view
This is a required field
Please enter a valid email address