Arsenic diffusion in boron-doped germanium

Arsenic diffusion in boron-doped germanium

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Arsenic (As) diffusion in germanium (Ge) has been studied by implanting As in a Ge substrate with high boron (B) background doping. The high hole density induced by the B doping suppresses negatively charged vacancies (V) in Ge. Under this condition, we have investigated the dependence of As diffusion on the dopant-vacancy pairs As+V0 by secondary ion mass spectroscopy. After rapid thermal annealing at 600−750°C, the chemical profiles of As do not change in the highly B doped Ge. Experimental results suggest that the As+V0 pairs are not the diffusion vehicles of As in Ge. Activation energy of the As+V0 pairs has to be larger than 3.25 eV.


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      • N.F. Mott , R.W. Gurney . (1940) Electronic processes in ionic crystals.

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